![]() ![]() Scaling GaN to higher power levels in IBCs and LV drivesġ0 kW electric vehicle charger with CoolGaN™ĭriving Infineon's CoolGaN™ GIT HEMTs with EiceDRIVER™ gate driver ICs ![]() With a predicted lifetime of more than 15 years and a failure rate below 1 FIT, customers can rely on its reliability and quality. The superfast switching speed of Infineon’s CoolGaN™ enables a very short dead-time. In high-frequency operations, above 200-250kHz, switching speed is key to determining how the transfer of energy occurs. Switched-mode power circuits using CoolGaN™ can benefit from the improved energy efficiency and the improved power density, which is not possible with state-of-the-art silicon devices. The pioneering quality ensures the highest standards and offers the most reliable and performing solution among all GaN HEMTs on the market. With extensive experience on the semiconductor market, Infineon’s GaN technology brought the e-mode concept to maturity with end-to-end production in high volumes. ![]() Infineon’s CoolGaN™ is a highly efficient GaN (gallium nitride) transistor technology for power conversion in the voltage range up to 600V. Therefore, hard-switching topologies such as totem-pole PFC can be employed to achieve higher efficiency, for example in datacenter and server power supplies, in order to save energy and reduce OPEX. ![]() As Infineon’s CoolGaN™ transistors have no minority carriers and no body diode they do not exhibit a reverse recovery. The most important feature of a GaN power transistor is its reverse recovery performance. Operation at high switching frequencies allows the volume of passive components to shrink which improves GaN HEMTs reliability and overall power density. Gallium nitride transistors can then be operated with reduced dead-times which results in higher efficiency and enables passive cooling. In particular, the higher critical electrical field makes it very attractive for power semiconductor devices with outstanding specific dynamic on-state resistance and smaller capacitances compared to silicon MOSFETs, which makes GaN HEMTs great for high speed switching applications. Gallium nitride (GaN) transistors offer fundamental advantages over silicon. ![]()
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